features z excellent dc current gain characteristics z complements the 2sb1386 maximum ratings ( t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 50 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 6 v i c collector current -continuous 5 a p c collector power dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =50 a, =0 6 v collector cut-off current i cbo v cb =40v,i e =0 0.5 a emitter cut-off current i ebo v eb =5v,i c =0 0.5 a dc current gain h fe v ce =2v,i c =0.5a 120 390 collector-emitter saturation voltage v ce(sat) i c =4a,i b =100ma 1 v transition frequency f t v ce =6v,i c =50ma,f=100mhz 150 mhz collector output capacitance c ob v cb =20v,i e =0,f=1mhz 30 pf classification of h fe rank q r range 120-270 180-390 marking ahq ahr sot-89 1. base 2. collector 3. emitter 1 2 3 1 www.htsemi.com semiconductor jinyu 2SD2098
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